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Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 1022-1026

Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs

(2) Blöchl, Peter E a Stathis, James H b

a IBM RESEARCH ZURICH (Switzerland)

b IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TUNNELING; LEAKAGE CURRENTS; SILICA;

DIELECTRIC BREAKDOWN; GATE OXIDES;

MOSFET DEVICES;

EID: 0343953429 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00628-6 Document Type: Article

Times cited : (38)

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