Investigations regarding the maskless Pendeo-epitaxial growth of GaN films prior to coalescence

IEEE Journal of Quantum Electronics

Volumn 38, Issue 8, 2002, Pages 1006-1016

  Roskowski, Amy M ^a   Preble, Edward A ^a   Einfeldt, Sven ^a,b   Miraglia, Peter M ^a   Davis, Robert F ^a  

^a North Carolina State University   (United States)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

Chemical vapor deposition; Semiconductor growth; Thin films; Topography

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COALESCENCE; EPITAXIAL GROWTH; ETCHING; GALLIUM NITRIDE; MASKS; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; TENSILE STRESS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

PENDEO-EPITAXIAL GROWTH;

THIN FILM CIRCUITS;

EID: 0036684044     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.801005     Document Type: Article

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