GaN decomposition in Ammonia

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue SUPPL. 1, 2000, Pages

  Koleske, D D ^a   Wickenden, A E ^a   Henry, R L ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; AMMONIA; CHEMICAL BONDS; DECOMPOSITION; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; THERMAL EFFECTS;

DECOMPOSITION RATES; GROWTH RATES; THRESHOLD TEMPERATURE;

GALLIUM NITRIDE;

EID: 3242816150     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300004385     Document Type: Conference Paper

References (26)

1. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys., 34, L1332 (1995).
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matushita, and T. Mukai, MRS Internet J. Nitride Semicond. Res. 4S1, G1.1 (1999).
3. S.N. Mohammad, A.A. Salvador, and H. Morkoc, Proc. IEEE 83, 1306 (1995).
4. S. S. Liu and D. A. Stevenson, J. Electrochem. Soc. 125, 1161 (1978).
5. 2 the bond strength is 4.8 eV. CRC Handbook of Chemistry and Physics, 66th edition, edited by R.C. Weast, (CRC Press, Cleveland, 1986).
6. R. Groh, G. Gerey, L. Bartha, and J. I. Pankove, Phys. Status Solidi A 26, 353 (1974).
7. N. Grandjean, J. Massies, F. Semond, S. Yu. Karpov, and R.A. Talalaev, Appl. Phys. Lett. 74, 1854 (1999).
8. D.D. Koleske, A.E. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, and R.J. Gorman, Appl. Phys. Lett. 73, 2018 (1998), erratum: ibid 75, 2018 (1999).
9. D.D. Koleske, A.B. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, and R.J. Gorman, MRS Internet J. Nitride Semicond. Res. 4S1, G3.70 (1999); http://nsr.mij.mrs.org/4S1/G3.70/
10. For a discussion of the surface kinetics of GaN growth, see D.D. Koleske, A.E. Wickenden, R.L. Henry, W.J. DeSisto, and R.J. Gorman, J. Appl. Phys. 84, 1998 (1998).
11. A. Rebey, T. Boufaden, B. El Jani, J. Cryst. Growth 203,12 (1999).
12. O. Briot, S. Clur, and R.L. Aulombard, Appl. Phys. Lett. 71, 1990 (1997).
13. A.B. Wickenden, D.D. Koleske, R.L. Henry, R.J. Gorman, J.C. Culbertson, and M.E. Twigg, J. A. Freitas, Jr., Electron. Mat. 28, 301 (1999).
14. C.D. Thurmond, R.A. Logan, J. Electrochem. Soc. 119, 622 (1972); R. A. Logan and C.D. Thurmond, J. Electrochem. Soc. 119, 1727 (1972).
15. C.D. Thurmond, R.A. Logan, J. Electrochem. Soc. 119, 622 (1972); R. A. Logan and C.D. Thurmond, J. Electrochem. Soc. 119, 1727 (1972).
16. M.E. Bartram and J. R. Creighton, MRS Internet J. Nitride Semicond. Res. 4S1, G3.68 (1999).
17. C.S. Kim, V.M. Bermudez, and J.N. Russell, Jr., Surf, Sci. 389, 162 (1997).
18. O. Ambacher, M.S. Brandt, R. Dimitrov, T. Metzger, M. Stutzmann, R.A. Fischer, A. Miehr, A. Bergmaier, and G. Dollinger, J. Vac. Sci. Technol B 14, 3532 (1996).
19. M. Hashimoto, H. Amano, N. Sawaki, and I. Akasaki, J. Cryst. Growth 68, 163 (1984).
20. M.A. Khan, R.A. Skogman, R.G. Schulze, and M. Gershenzon, Appl. Phys. Lett. 43, 493 (1983).
21. O. Briot, S. Clur, and R.L. Aulombard, Appl. Phys. Lett. 71, 1990 (1997).
22. T. J. Kistenmacher, D.K. Wickenden, M.E. Hawley, and R.P. Leavitt, Mat. Res. Soc. Symp. Proc. 395, 261 (1996).
23. K. Tadatomo, Y. Ohuchi, H. Okagawa, H. Itoh, H. Miyake, and K. Hiramatsu, MRS Internet J. Nitride Semicond. Res. 4S1, G3.1 (1999); http://nsr.mij.mrs. Org/4S1/G3.1/
24. O. Schön B. Schineller, M. Heuken, and R. Beccard, J. Cryst. Growth 189/190, 335 (1998).
25. L.D. Bell, R.P. Smith, B.T. MCDermott, E.R. Gertner, R. Pittman, R.L. Pierson, and G.J. Sullivan, J. Vac. Sci. Technol. B 16, 2286 (1998).
26. T.-B. Ng, J. Han, R.M. Biefeld, and M.V. Weckwerth, J. Electronic Mat. 27, 190 (1998).