Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation

Journal of Crystal Growth

Volumn 210, Issue 4, 2000, Pages 435-443

  Zauner, A R A ^a   Weyher, J L ^a,b   Plomp, M ^a   Kirilyuk, V ^a   Grzegory, I ^b   Van Enckevort, W J P ^a   Schermer, J J ^a   Hageman, P R ^a   Larsen, P K ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIFFUSION; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SINGLE CRYSTALS; SURFACE STRUCTURE;

FREE EXCITONIC TRANSITION; GALLIUM NITRIDE; HEXAGONAL HILLOCK DENSITY; HOMO EPITAXIAL GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033875232     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00886-6     Document Type: Article

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