Enhanced GaN decomposition at movpe pressures

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Koleske, D D ^a   Wickenden, A E ^a   Henry, R L ^a   Twigg, M E ^a   Culbertson, J C ^a   Gorman, R J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; COALESCENCE; DECOMPOSITION; DESORPTION; DIFFUSION; DISSOCIATION; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; OXIDATION; PHASE EQUILIBRIA; REACTION KINETICS; SAPPHIRE; SUBSTRATES;

CRYSTAL QUALITY; GALLIUM NITRIDE FILMS; SURFACE MOBILITY;

GALLIUM NITRIDE;

EID: 3442890682     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002763     Document Type: Conference Paper

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