In situ gravimetric monitoring of decomposition rate from GaN epitaxial surface

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 7, 2000, Pages

  Mayumi, Miho ^a   Satoh, Fumitaka ^a   Kumagai, Yoshinao ^a   Takemoto, Kikurou ^a   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATMOSPHERIC PRESSURE; DECOMPOSITION; GRAVIMETRIC ANALYSIS; HELIUM; HIGH TEMPERATURE OPERATIONS; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; PARTIAL PRESSURE; SAPPHIRE; SUBSTRATES; SURFACES;

CARRIER GAS; DECOMPOSITION RATE; GALLIUM NITRIDE; IN SITU GRAVIMETRIC MONITORING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033634225     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l707     Document Type: Article

References (9)