Comparison of MOSFET-threshold-voltage extraction methods

Solid-State Electronics

Volumn 45, Issue 1, 2001, Pages 35-40

  Terada, Kazuo ^a   Nishiyama, Katsuhiko ^a   Hatanaka, Kei ichi ^a  

^a HIROSHIMA CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MODULATION; STATISTICAL METHODS; SUBSTRATES; THRESHOLD VOLTAGE;

CHANNEL-LENGTH MODULATION; THRESHOLD VOLTAGE EXTRACTION METHODS;

MOSFET DEVICES;

EID: 0035151760     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00187-8     Document Type: Article

References (8)

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3. Lee H., Oh S., Fuller G. A simple and accurate method to measure the threshold voltage of an enhancement-mode MOSFET. IEEE Trans Electron Dev. ED-29:1982;346-348.
4. Aoyama K. A method for extracting the threshold voltage of MOSFETs based on current components. Simulation of semiconductor devices and processes. 6:1995;118-121.
5. Wong H., White M., Krutsick T., Booth R. Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFETs. Solid-State Electron. 30:1987;953-968.
6. Tsuno M, Suga M, Tanaka M, Shibahara K, Miura-Mattaush M, Hirose M. Physically-based threshold voltage determination for MOSFETs of all gate lengths. IEEE Trans Electron Dev 1999; ED-46:1429-34.
7. Taur Y., Ning T. Fundamentals of modern VLSI devices. 1998;Cambridge University Press, Cambridge.
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