A simple procedure to extract the threshold voltage of amorphous thin film MOSFETs in the saturation region

Solid-State Electronics

Volumn 45, Issue 5, 2001, Pages 663-667

  Ortiz Conde, Adelmo ^a   Cerdeira, Antonio ^a   Estrada, Magali ^a   García Sánchez, Francisco J ^b   Quintero, Rodolfo ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b UNIVERSIDAD SIMÓN BOLÍVAR   (Venezuela)

Author keywords

Amorphous MOSFETs; Parameter extraction; Thin film transistors; Threshold voltage

Indexed keywords

AMORPHOUS FILMS; CRYSTALLINE MATERIALS; GATES (TRANSISTOR); THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

PARAMETER EXTRACTION;

MOSFET DEVICES;

EID: 0035335588     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00123-X     Document Type: Article

References (14)

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5. Measurement of threshold voltage and channel length of submicron MOSFETs
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7. A new approach to extract the threshold voltage of MOSFETs
8. Reliable threshold voltage determination for sub-0.1 (m gate length MOSFETs
9. Threshold voltage extraction methods for MOS transistors
10. Proportional difference operator method and its application in studying subthreshold behavior of MOSFETS
11. New simple procedure to determine the threshold voltage of MOSFETs
12. A compact CAD model for amorphous silicon thin film transistors simulation-I. D.c. analysis