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Volumn 9, Issue 2, 1996, Pages 215-222

An efficient method for determining threshold voltage, series resistance and effective geometry of MOS transistors

Author keywords

[No Author keywords available]

Indexed keywords

CONVERGENCE OF NUMERICAL METHODS; DIFFERENTIATION (CALCULUS); ELECTRIC RESISTANCE MEASUREMENT; ITERATIVE METHODS; LEAST SQUARES APPROXIMATIONS; NONLINEAR EQUATIONS; OPTIMIZATION; PROCESS CONTROL; REGRESSION ANALYSIS; RESISTORS; SEMICONDUCTOR DEVICE MODELS; VOLTAGE MEASUREMENT;

EID: 0030151214     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.492815     Document Type: Article
Times cited : (25)

References (13)
  • 2
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    • Experimental derivation of the source and drain resistance of MOS transistors
    • Sept.
    • P. I. Suciu and R. L. Johnston, "Experimental derivation of the source and drain resistance of MOS transistors," IEEE Trans. Electron Devices, vol. ED-27, pp. 1846-1848, Sept. 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , pp. 1846-1848
    • Suciu, P.I.1    Johnston, R.L.2
  • 3
    • 0025511663 scopus 로고
    • Measuring the effective channel length of MOSFET's
    • Nov.
    • K. K. Ng and J. R. Brews, "Measuring the effective channel length of MOSFET's," IEEE Circ. and Devices, pp. 33-38, Nov. 1990.
    • (1990) IEEE Circ. and Devices , pp. 33-38
    • Ng, K.K.1    Brews, J.R.2
  • 4
    • 0026953281 scopus 로고
    • Extraction of series-resistance-independent MOS transistor model parameters
    • Nov.
    • P. R. Karlsson and K. O. Jeppson, "Extraction of series-resistance-independent MOS transistor model parameters," IEEE Electron Device Letters, vol. 13, pp. 581-583, Nov. 1992.
    • (1992) IEEE Electron Device Letters , vol.13 , pp. 581-583
    • Karlsson, P.R.1    Jeppson, K.O.2
  • 5
    • 0018468995 scopus 로고
    • A new method to determine effective MOSFET channel length
    • K. Terada and H. Muta, "A new method to determine effective MOSFET channel length," Jpn. J. Appl. Phys., vol. 18, no. 5, pp. 953-959, 1979.
    • (1979) Jpn. J. Appl. Phys. , vol.18 , Issue.5 , pp. 953-959
    • Terada, K.1    Muta, H.2
  • 7
    • 0025469484 scopus 로고
    • A new measurement method of MOS transistor parameters
    • C. Ciofi, M. Macucci, and B. Pellegrini, "A new measurement method of MOS transistor parameters," Solid-State Electron., vol. 33, no. 8, pp. 1065-1069, 1990.
    • (1990) Solid-State Electron. , vol.33 , Issue.8 , pp. 1065-1069
    • Ciofi, C.1    Macucci, M.2    Pellegrini, B.3
  • 8
    • 0026940475 scopus 로고
    • MOSFET effective channel length, threshold voltage and series resistance determination by robust optimization
    • Oct.
    • C. C. McAndrew and P. A. Layman, "MOSFET effective channel length, threshold voltage and series resistance determination by robust optimization," IEEE Trans. Electron Devices, vol. 39, pp. 2298-2311, Oct. 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 2298-2311
    • McAndrew, C.C.1    Layman, P.A.2
  • 9
    • 0028124005 scopus 로고
    • A direct method to extract effective geometries and series resistances of MOS transistors
    • P. R. Karlsson and K. O. Jeppson, "A direct method to extract effective geometries and series resistances of MOS transistors," in Proc. IEEE Int. Conf. Microelectronic Test Structures, 1994, pp. 184-189.
    • (1994) Proc. IEEE Int. Conf. Microelectronic Test Structures , pp. 184-189
    • Karlsson, P.R.1    Jeppson, K.O.2
  • 10
    • 0022693437 scopus 로고
    • First-order parameter extraction on enhancement silicon MOS transistors
    • M. F. Hamer, "First-order parameter extraction on enhancement silicon MOS transistors," IEE Proc., vol. 133, pt. I, no. 2, pp. 49-54, 1986.
    • (1986) IEE Proc. , vol.133 , Issue.2 PART I , pp. 49-54
    • Hamer, M.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.