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Volumn 18, Issue 9, 1997, Pages 408-410

Device parameter extraction in the linear region of MOSFET's

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; CURVE FITTING; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK PARAMETERS; ELECTRIC RESISTANCE; LEAST SQUARES APPROXIMATIONS;

EID: 0031233839     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.622512     Document Type: Article
Times cited : (24)

References (7)
  • 1
    • 0018468995 scopus 로고
    • A new method to determine effective MOSFET channel length
    • K. Terada and H. Muta, "A new method to determine effective MOSFET channel length," Jpn. J. Appl. Phys., vol. 18, pp. 953-959, 1979.
    • (1979) Jpn. J. Appl. Phys. , vol.18 , pp. 953-959
    • Terada, K.1    Muta, H.2
  • 2
    • 0019057709 scopus 로고
    • Experimental derivation of the source and drain resistance of MOS transistors
    • P. L. Suciu and R. L. Johnston, "Experimental derivation of the source and drain resistance of MOS transistors," IEEE Trans. Electron Devices, vol. ED-27, pp. 1846-1848, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , pp. 1846-1848
    • Suciu, P.L.1    Johnston, R.L.2
  • 3
    • 0024143472 scopus 로고
    • Measurement of threshold voltage and channel length of submicron MOSFET's
    • S. Jain, "Measurement of threshold voltage and channel length of submicron MOSFET's," Proc. Inst. Elect. Eng., vol. 135, pp. 162-164, 1988.
    • (1988) Proc. Inst. Elect. Eng. , vol.135 , pp. 162-164
    • Jain, S.1
  • 5
    • 0024682748 scopus 로고
    • Parameter extraction from I-V characteristics of single MOSFET's
    • L. Selmi, E. Sangiorgi, and B. Ricco, "Parameter extraction from I-V characteristics of single MOSFET's," IEEE Trans. Electron Devices, vol. 36, pp. 1094-1101, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 1094-1101
    • Selmi, L.1    Sangiorgi, E.2    Ricco, B.3
  • 6
    • 0038428181 scopus 로고
    • Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
    • S. C. Sun and J. D. Plummer, "Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces," IEEE J. Solid-State Circuits, vol. SSC-15, pp. 562-573, 1980.
    • (1980) IEEE J. Solid-State Circuits , vol.SSC-15 , pp. 562-573
    • Sun, S.C.1    Plummer, J.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.