A physically based relation between extracted threshold voltage and surface potential flat-band voltage for MOSFET compact modeling

IEEE Transactions on Electron Devices

Volumn 48, Issue 5, 2001, Pages 1019-1021

  Benson, James ^a   D'Halleweyn, Nele V ^a   Redman White, William ^a   Easson, Craig A ^b   Uren, Michael J ^c   Faynot, Olivier ^d   Pelloie, Jean Luc ^d  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b MAXIM INTEGRATED PRODUCTS   (United States)

^c DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

^d CEA LETI   (France)

Author keywords

Modeling; MOSFET; Threshold voltage

Indexed keywords

EXTRAPOLATION; MATHEMATICAL MODELS; OPTIMIZATION; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; TRANSISTORS; VOLTAGE MEASUREMENT;

FLAT BAND VOLTAGE; LINEAR EXTRAPOLATION METHOD; SURFACE POTENTIAL;

MOSFET DEVICES;

EID: 0035341045     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.918258     Document Type: Article

References (13)