New simple procedure to determine the threshold voltage of MOSFETs

Solid-State Electronics

Volumn 44, Issue 4, 2000, Pages 673-675

  Garcia Sanchez F J ^a   Ortiz Conde, A ^a   De Mercato, G ^a   Salcedo, J A ^a   Liou, J J ^b   Yue, Y ^c  

^a UNIVERSIDAD SIMÓN BOLÍVAR   (Venezuela)

^b University of Central Florida   (United States)

^c INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; EXTRAPOLATION; MEASUREMENT ERRORS; THRESHOLD VOLTAGE;

SOFTWARE PACKAGE AIM-SPICE; SUBTHRESHOLD TO STRONG INVERSION TRANSITION REGION;

MOSFET DEVICES;

EID: 0033897107     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00254-3     Document Type: Article

References (10)

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2. Ortiz-Conde A., Gouveia E., Liou J.J., Hassan M.R., García Sánchez F.J., De Mercato G., Wang W. A new approach to extract the threshold voltage of MOSFETs. IEEE Trans. Electron Dev. ED-44:1997;1523-1528.
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10. García Sánchez F.J., Ortiz-Conde A., De Mercato G., Salcedo J.A., Liou J.J., Yue Y., Finol J. Extracting the threshold voltage from the subthreshold to strong inversion transition region of MOSFETs. Proc. XIV Conf. on Design of Cir. & Integr. Syst., Palma de Mallorca, Spain, 16-19 November, 1999. 1999.