New method for the parameter extraction in Si MOSFETs after hot carrier injection

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 1997, Pages 63-66

  Hardillier, S ^a   Mourrain, C ^a   Bouzid, M J ^a   Ghibaudo, G ^a  

^a France Telecom   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; HOT CARRIERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

PARAMETER EXTRACTION TECHNIQUE;

MOSFET DEVICES;

EID: 0030677091     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)