A compact CAD model for amorphous silicon thin film transistors simulation - I. d.c. analysis

Solid-State Electronics

Volumn 39, Issue 8, 1996, Pages 1231-1239

  Merckel, G ^a   Rolland, A ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); LIQUID CRYSTAL DISPLAYS; MOSFET DEVICES; OPTIMIZATION; PROCESS CONTROL; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS; AMORPHOUS SILICON THIN FILM TRANSISTORS; MOSFET MODELLING; NON QUASI STATIC TRANSIENT OPERATION;

THIN FILM TRANSISTORS;

EID: 0030211954     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00011-1     Document Type: Review

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