An improved definition for modelling the threshold voltage of MOSFETs

Solid-State Electronics

Volumn 42, Issue 9, 1998, Pages 1743-1746

  Ortiz Conde, A ^a   Rodriguez J ^a   Garcia Sanchez F J ^a   Liou, J J ^b  

^a UNIVERSIDAD SIMÓN BOLÍVAR   (Venezuela)

^b University of Central Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

SURFACE BAND BENDING;

MOSFET DEVICES;

EID: 0032165018     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00138-5     Document Type: Article

References (13)

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