Accurate relationship for determining the key parameters of MOSFETs by proportional difference operator method

Solid-State Electronics

Volumn 44, Issue 6, 2000, Pages 959-962

  Wang, Jinyan ^a   Xu, Mingzhen ^a   Tan, Changhua ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTATIONAL COMPLEXITY; THRESHOLD VOLTAGE;

PEAK DRAIN VOLTAGE; PROPORTIONAL DIFFERENCE OPERATOR METHOD;

MOSFET DEVICES;

EID: 0033745488     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00014-9     Document Type: Article

References (4)

1. Schroder DK. Semiconductor material and device characterization. New York: Wiley, 1990 [chapter 4].
2. Sze MS. Physics of semiconductor devices. 2nd ed. New York: Wiley, 1981 [chapters 7 and 8].
3. Xu M., Tan C., He Y., Wang Y. A spectral analysis method to directly determine minority carrier generation lifetime using the pulsed MOS structure. Solid State Electron. 37:1994;31-36.
4. Tan C., Xu M., Wang J., Xie B., He Y. Proportional difference operator method and its application to studying the saturation characteristics of MOSFETs. Electron Lett. 34(21):1998;2067-2069.