New ratio method for effective channel length and threshold voltage extraction in MOS transistors

Electronics Letters

Volumn 37, Issue 11, 2001, Pages 717-719

  Cretu, B ^a   Boutchacha, T ^a   Ghibaudo, G ^a   Balestra, F ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; REGRESSION ANALYSIS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DRAIN CURRENT;

MOSFET DEVICES;

EID: 0035942615     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010467     Document Type: Article

References (8)

1. Simple extraction method for the mobility parameters in Si-MOSFETs at 77K
2. On the high electric field mobility behavior in Si MOSFETs from room to liquid helium temperature
3. A simple parameter extraction method for ultra-thin oxide MOSFETs
4. A new "shift and ratio" method for MOSFET channel length extraction
5. A new method for the extraction of MOSFET parameters
6. New method for parameter extraction in deep submicrometer MOSFETs
7. 50-Å gate oxide MOSFETs at 77K
8. New method for the parameter extraction in Si MOSFETs after hot carrier injection