A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs

IEEE Transactions on Electron Devices

Volumn 49, Issue 1, 2002, Pages 82-88

  García Sánchez, Francisco J ^a,b   Ortiz Conde, Adelmo ^a,b   Cerdeira, Antonio ^a,c   Estrada, Magali ^a,c   Flandre, Denis ^a,d   Liou, Juin J ^a,e,f  

^a IEEE   (Venezuela)

^b UNIVERSIDAD SIMÓN BOLÍVAR   (Venezuela)

^c DEPARTAMENTO DE FÍSICA   (Mexico)

^d UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^e University of Central Florida   (United States)

^f HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Mobility degradation; Parameter extraction; Series resistance; SOI MOSFETs; Threshold voltage; Velocity saturation

Indexed keywords

CARRIER MOBILITY DEGRADATION; DRAIN CURRENT; GATE VOLTAGE; PARAMETER EXTRACTION; SERIES RESISTANCE;

CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0036257408     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974753     Document Type: Article

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