Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1789-1799

  De Salvo, Barbara ^b   Ghibaudo, Gérard ^a,c   Pananakakis, G ^c   Masson, Pascal ^a,d   Baron, Thierry ^d   Buffet, Nicholas ^b   Fernandes, Antoine ^b   Guillaumot, Bernard ^e  

^a IEEE

^b CEA LETI   (France)

^c Grenoble INP Phelma   (France)

^d INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^e STMICROELECTRONICS   (France)

Author keywords

Memory; MOS device; Nano crystal; Nitride

Indexed keywords

CHEMICAL VAPOR DEPOSITION; MATHEMATICAL MODELS; MOS DEVICES; NANOSTRUCTURED MATERIALS; NITRIDES; SEMICONDUCTING SILICON; STATISTICAL METHODS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY;

FLOATING GATE-LIKE APPROACH; SEMICONDUCTOR NANO-CRYSTALS; SHOCKLEY-READ-HALL STATISTICS; SILICON NANO-CRYSTALS;

SEMICONDUCTOR STORAGE;

EID: 0035424934     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936709     Document Type: Conference Paper

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