Room Temperature Operation Of Si Single-Electron Memory with Self-Aligned Floating Dot Gate h

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 952-954

  Nakajima, Anri ^a   Futatsugi, Toshiro ^a   Kosemura, Kinjiro ^a   Fukano, Tetsu ^a   Yokoyama, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON DEVICE MANUFACTURE; FABRICATION; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; TEMPERATURE;

DRAIN CURRENT; GATE VOLTAGE; ROOM TEMPERATURE OPERATION; SELF ALIGNED FLOATING DOT GATE; SINGLE ELECTRON MEMORY;

ELECTRON DEVICES;

EID: 0030382660     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554140     Document Type: Conference Paper

References (3)

1. K. Yano, et al., IEDM, p. 541, 1993.
2. Y.Takahashi, et al., IEDM, p. 938,1994.
3. A. Nakajima, et al., Jpn. J. Appl. Phys. 33,L1796 (1994).