A Room-Temperature Single-Electron Memory Device Using Fine-Grain Polycrystalline Silicon

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 541-544

  Yano, Kazuo ^a   Ishii, Tomoyuki ^a   Hashimoto, Takashi ^a   Kobayashi, Takashi ^a   Murai, Fumio ^a   Seki, Koichi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; POLYCRYSTALLINE MATERIALS; RANDOM ACCESS STORAGE; SILICON; GATES (TRANSISTOR); TRANSISTORS;

ACTIVE REGIONS; CIRCUIT ELEMENTS; FINER GRAINS; HIGH CHARGE SENSITIVITY; MEMORY CONFIGURATION; POLY-SI FILMS; POLY-SI TFTS; ROOM-TEMPERATURE OPERATION; SINGLE ELECTRON MEMORY DEVICES; ULTRA-THIN;

THRESHOLD VOLTAGE; SEMICONDUCTOR STORAGE;

ONE BIT INFORMATION; SINGLE ELECTRON MEMORY DEVICE; THRESHOLD VOLTAGE;

EID: 0027889406     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. D. V. Averin and K. K. Likharev, in Quantum Effects in Small Disordered Systems, ed. by B. Al'tshuler et al. (Elsevier, 1991);
2. D. K. Ferry, J. R. Baker, and C. Jacoboni.eds., Granular Nanoelectronics (Plenum Press, 1991).
3. L. J. Geerligs, V. F. Anderegg, P. A. M. Holweg, J. E. Mooil, H. Pothier, D. Esteve, C. Urbina, and M. H. Devoret, Phys. Rev. Lett. 64, 2691 (1990);
4. L. P. Kouwenhoven, A. T. Johnson, N. C. van der Vaart, C. J. P. M. Harmans, and C. T. Foxon, Phys. Rev. Lett. 67, 1626 (1991).
5. K. Nakazato, R. J. Blaikie, J. R. A. Cleaver and H. Ahmed, Electronics Letters, 29, No. 4, 384 (1993).
6. K. Yano, D. K. Ferry and K. Seki, IEEE International Electron Devices Meeting, p. 557 (1992).
7. C. Schönenberger and H. van Houten, 1992 International Conference on Solid State Devices and Materials, 726 (1992).