Kinetic modelling of electron tunneling processes in quantum dots coupled to field-effect transistors

Superlattices and Microstructures

Volumn 23, Issue 3-4, 1998, Pages 757-770

  Rana, Farhan ^a   Tiwari, Sandip ^b   Welser, J J ^b  

^a Department of Electrical Engineering and Computer Science   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Charging; Discharging; Field effect transistor; Master equation; Memory; Modeling; Nano crystal; Quantum dot; Rate equation; Tunneling

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; KINETIC THEORY;

COULOMB BLOCKADE; MASTER EQUATION; QUANTUM CONFINEMENT; RATE EQUATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031679704     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1997.0539     Document Type: Article

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