Single electron charging of Sn nanocrystals in thin SiO2 film formed by low energy ion implantation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 159-162

  Nakajima, Anri ^a   Futatsugi, Toshiro ^a   Horiguchi, Naoto ^a   Nakao, Hiroshi ^a   Yokoyama, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SINGLE ELECTRON CHARGING;

ANNEALING; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; FILM PREPARATION; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; SILICA; THERMAL EFFECTS; THIN FILMS; TIN;

SEMICONDUCTING FILMS;

EID: 84886447965     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)