Investigation of dynamic memory effects in Si-dot devices

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 280-283

  De Salvo, B ^a   Fernandes, A ^a   Ghibaudo, G ^b   Guillaumot, B ^c   Baron, T ^d   Reimbold, G ^a  

^a CEA GRENOBLE   (France)

^b Grenoble INP Phelma   (France)

^c SGS THOMSON Microelectronics   (France)

^d IRISA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SOLID STATE DEVICES;

CHARGING/DISCHARGING; DEVICE PARAMETERS; DIELECTRIC THICKNESS; MEMORY STRUCTURE; TEMPERATURE-DEPENDENT MEASUREMENTS; TRANSFER CHARACTERISTICS; TRANSIENT REGIME; TUNNELING CURRENT;

SILICON;

EID: 84907806828     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194769     Document Type: Conference Paper

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