Si Single-Electron MOS Memory With Nanoscale Floating-Gate and Narrow Channel

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 955-956

  Guo, Lingjie ^a   Leobandung, Effendi ^a   Chou, Stephen Y ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; ELECTRON DEVICES; GATES (TRANSISTOR); MOS DEVICES; MOSFET DEVICES; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY;

DRAIN CURRENT; GATE VOLTAGE; NANOSCALE FLOATING GATE; NARROW CHANNEL; SINGLE ELECTRON CHARGING EFFECT; SINGLE ELECTRON MOS MEMORY; THRESHOLD VOLTAGE;

SEMICONDUCTOR STORAGE;

EID: 0030399245     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554141     Document Type: Conference Paper

References (2)

1. K. Yano, et al, IEEE Trans. Electron Devices., 41, 1628 (1994)
2. S. Tiwari, et al, Appl. Phys. Lett., 68, 1377 (1996)