Write, erase and storage times in nanocrystal memories and the role of interface states

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 375-378

  Wahl, J A ^a   Silva, H ^a   Gokirmak, A ^a   Kumar, A ^a   Welser, J J ^a   Tiwari, Sandip ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; PERCOLATION (SOLID STATE); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITANCE VOLTAGE CHARACTERISTICS; INTERFACE STATES; NANOCRYSTAL MEMORIES;

SEMICONDUCTOR STORAGE;

EID: 0033311566     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)