Room temperature operation of a quantum-dot flash memory

IEEE Electron Device Letters

Volumn 18, Issue 6, 1997, Pages 278-280

  Welser, J J ^a   Tiwari, Sandip ^a   Rishton, S ^a   Lee, K Y ^a   Lee, Y ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); LOW TEMPERATURE OPERATIONS; SEMICONDUCTOR QUANTUM DOTS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

QUANTUM DOT FLASH MEMORY;

SEMICONDUCTOR STORAGE;

EID: 0031167986     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.585357     Document Type: Article

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