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Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 1004-1008

Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices

(5) Baron, T a Martin, F b Mur, P b Wyon, C b Dupuy, M b

a INSTITUT DES NANOTECHNOLOGIES DE LYON (France)

b CEA LETI (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; HIGH RESOLUTION ELECTRON MICROSCOPY; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA; SPECTROSCOPIC ANALYSIS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033893317 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(99)00742-3 Document Type: Article

Times cited : (100)

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