Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 111-114

  Kim, Ilgweon ^a   Han, Sangyeon ^a   Kim, Hyungsik ^a   Lee, Jongho ^a   Choi, Bumho ^a   Hwang, Sungwoo ^a   Ahn, Doyeol ^a   Shin, Hyungcheol ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; NITRIDES; OXIDES; PROM; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS;

ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORIES (EEPROM); QUANTUM DOT MEMORIES; SINGLE ELECTRON EFFECTS; TUNNELING DIELECTRICS;

SEMICONDUCTOR STORAGE;

EID: 0032256628     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)