High rates and very low temperature fabrication of polycrystalline silicon from fluorinated source gas and their transport properties

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 513-518

  Kamiya, T ^a   Nakahata, K ^a   Ro, K ^a   Fortmann, C M ^a   Shimizu, I ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; FILM GROWTH; GASES; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SCHOTTKY BARRIER DIODES; SILICON COMPOUNDS; THIN FILMS;

SCHOTTKY DIODE SOLAR CELLS; SILICON TETRAFLUORIDE;

SEMICONDUCTING SILICON;

EID: 0033298796     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-557-513     Document Type: Article

References (6)

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