Electrical and structural properties of solid phase crystallized polycrystalline silicon and their correlation to single-electron effects

Journal of Applied Physics

Volumn 89, Issue 2, 2001, Pages 1262-1270

  Tan, Y T ^a   Durrani, Z A K ^a   Ahmed, H ^a  

^a Tosoh SMD Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001367742     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1331338     Document Type: Article

References (26)

1. K. Nakazato, R. J. Blaikie, J. R. A. Cleaver, and H. Ahmed, Electron. Lett. 29, 384 (1993).
2. H. Ahmed, Physica B 227, 259 (1996).
3. A. Dutta and S. Oda, Jpn. J. Appl. Phys., Part 1 36, 4038 (1997).
4. H. J. Kim and J. S. Im, Appl. Phys. Lett. 68, 1513 (1996).
5. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki, Tech. Dig. Int. Electron Devices Meet. 1993, 2121 (1993).
6. M. K. Hatalis and D. W. Greve, J. Appl. Phys. 63, 2260 (1988).
7. T. I. Kamins and K. L. Chiang, J. Electrochem. Soc. 129, 2331 (1982).
8. V. Ng and H. Ahmed, J. Appl. Phys. 86, 6931 (1999).
9. A. C. Irvine, Z. A. K. Durrani, and H. Ahmed, Appl. Phys. Lett. 73, 1113 (1998).
10. T. Kamins, Polycrystalline Silicon for Integrated Circuits and Displays, 2nd ed. (Kluwer, Boston, 1998).
11. K. Nakazato, R. J. Blaikie, and H. Ahmed, J. Appl. Phys. 75, 5123 (1994).
12. M. H. Devoret and H. Grabert, Single Charge Tunneling-Coulomb Blockade Phenomena in Nanosiructures, NATO ASI series B, Physics, edited by H. Grabert and M. H. Devoret, 294, 14 (Plenum, New York, 1992).
13. N. H. Nickel, G. B. Anderson, and R. I. Johnson, Phys. Rev. B 56, 12065 (1997).
14. W. E. Carlos and S. M. Prokes, Appl. Phys. Lett. 65, 1245 (1994).
15. D. Ballutaud, M. Aucouturier, and F. Babonneau, Appl. Phys. Lett. 49, 1620 (1986).
16. S. M. Sze, VLSI Technology, 2nd ed. (McGraw-Hill, Singapore, 1988).
17. Z. Iqbal and S. Veprek, J. Phys. C 15, 377 (1982).
18. P. M. Fauchet and I. Campbell, Crit. Rev. Solid State Mater. Sci. 14, S79 (1988).
19. B. Pivac, K. Furic, D. Desnica, A. Borghesi, and A. Sassella, J. Appl. Phys. 86, 4383 (1999).
20. R. A. Street, Hydrogenated Amorphous Silicon (Cambridge University Press, United Kingdom, 1991).
21. Z. Iqbal, S. Veprek, A. P. Webb, and P. Capezzuto, Solid State Commun. 37, 993 (1981).
22. T. Kimura, M. Hirose, and Y. Osaka, J. Appl. Phys. 56, 932 (1984).
23. J. S. Johannessen, W. E. Spicer, J. F. Gibbons, J. D. Plummer, and N. J. Taylor, J. Appl. Phys. 49, 4453 (1978).
24. K. C. Saraswat and Harinder Singh, J. Electrochem. Soc. 129, 2321 (1982).
25. H. Sunami, J. Electrochem. Soc. 125, 892 (1978).
26. C. R. M. Grovenor, J. Phys. C 18, 4079 (1985).