Structure of polycrystalline silicon films deposited at low temperature by plasma CVD on substrates exposed to different plasma

Thin Solid Films

Volumn 337, Issue 1-2, 1999, Pages 27-31

  Moniruzzaman, S ^a   Inokuma, T ^a   Kurata, Y ^a   Takenaka, S ^a,b   Hasegawa, S ^a  

^a KANAZAWA UNIVERSITY   (Japan)

^b SEIKO EPSON CORPORATION   (Japan)

Author keywords

Nucleation density; Plasma enhanced chemical vapor deposition; Poly Si; Structural properties; Surface treatment

Indexed keywords

EID: 0002298278     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01170-5     Document Type: Article

References (5)

1. M.K. Hatalis, D.W. Greve, IEEE Electron Devices Lett. EDL-8 (1987) 361.
2. S. Moniruzzaman, T. Inokuma, Y. Kurata, S. Hasegawa, Jpn. J. Appl. Phys. 36 (1997) 6625.
3. S.J.N. Mitchell, S.H. Raza, B.M. Armstrong, H.S. Gamble, Mater. Res. Soc. Symp. Proc. 182 (1990) 35.
4. S. Hasegawa, S. Narikawa, Y. Kurata, Philos. Mag. B 48 (1983) 431.
5. R. Tsu, G. Gonzalez-Hernandez, S.S. Chao, S.C. Lee, K. Tanaka, Appl. Phys. Lett. 40 (1982) 534.