Control of crystallinity of microcrystalline silicon film grown on insulating glass substrates

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 857-860

  Zhou, Jiang Huai ^a   Ikuta, Kazuyuki ^b   Yasuda, Tetsuji ^b   Umeda, Takahide ^b   Yamasaki, Satoshi ^b   Tanaka, Kazunobu ^b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

Microcrystalline silicon; Plasma enhanced chemical vapor deposition

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; FILM GROWTH; GLASS; INSULATING MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES;

MICROCRYSTALLINE SILICON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SEMICONDUCTING FILMS;

EID: 0032066498     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00199-9     Document Type: Article

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