Microcrystalline silicon growth by the layer-by-layer technique: Long term evolution and nucleation mechanisms

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 871-874

  Roca I Cabarrocas, Pere ^a   Layadi, Nacer ^a,b   Drevillon, Bernard ^a   Solomon, Ionel ^a  

^a ECOLE POLYTECHNIQUE   (France)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; DEPOSITION; DIFFUSION; ELLIPSOMETRY; ETCHING; FILM GROWTH; HYDROGEN; NUCLEATION; PHASE TRANSITIONS; POROUS MATERIALS; SEMICONDUCTING SILICON; SPECTROSCOPY;

LAYER BY LAYER TECHNIQUE; LONG TERM EVOLUTION; MICROCRYSTALLINE SILICON; SUBSTRATE SELECTIVITY;

SEMICONDUCTING FILMS;

EID: 4243556629     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00073-7     Document Type: Article

References (9)

1. J.J. Wagner and S. Veprek, Plasma Chem. Plasma Proc. 2 (1982) 95.
2. C.C. Tsai, G.B. Anderson, R. Thompson and B. Wacker, J. Non-Cryst. Solids 114 (1989) 151.
3. I. Solomon, B. Drévillon, H. Shirai and N. Layadi, J. Non-Cryst. Solids 164-166 (1993) 989.
4. K. Nomoto, Y. Urano, J.L. Guizot, G. Ganguly and A. Matsuda, Jpn. J. Appl. Phys. 29 (1990) L1372.
5. N. Shibata, K. Fukada, H. Ohtoshi, J. Hanna, S. Oda and I. Shimizu, Mater. Res. Soc. Proc. 95 (1987) 225.
6. N. Layadi, P. Roca i Cabarrocas, B. Drévillon and I. Solomon, Phys. Rev. B52 (1995) 5136.
7. P. Roca i Cabarrocas, N. Layadi, T. Heitz, B. Drévillon and I, Solomon, Appl. Phys. Lett. 66 (1995) 3609.
8. H. Richter and L. Ley, J. Phys. 43 (1982) C1-247.
9. C. Godet, N. Layadi and P. Roca i Cabarrocas, Appl. Phys. Lett. 66 (1995) 3146.