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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 6 A, 2000, Pages 3294-3301

Fabrication of polycrystalline silicon films from SiF4/H2/SiH4 gas mixture using very high frequency plasma enhanced chemical vapor deposition with in situ plasma diagnostics and their structural properties

(6) Nakahata, Kouichi a Ro, Kazuyoshi a Suemasu, Atsushi a Kamiya, Toshio a Fortmann, Charles Michael a Shimizu, Isamu a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Low temperature growth; Microstructure; Optical emission spectroscopy; Polycrystalline silicon; SiF4; Very high frequency plasma enhanced chemical vapor deposition

Indexed keywords

COMPOSITION; CRYSTAL MICROSTRUCTURE; EMISSION SPECTROSCOPY; FILM GROWTH; HYDROGEN; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILANES; THERMAL EFFECTS;

SILICON FLUORIDE;

SEMICONDUCTING FILMS;

EID: 0034206673 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.3294 Document Type: Article

Times cited : (20)

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