Role of Seed Crystal Layer in Two-Step-Growth Procedure for Low Temperature Growth of Polycrystalline Silicon Thin Film from SiF4 by a Remote-Type Microwave Plasma Enhanced Chemical Vapor Deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 5762-5767

  Kamiya, Toshio ^a   Ro, Kazuyoshi ^a   Fortmann, Charles M ^a   Shimizu, Isamu ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Layer by layer technique; Microwave plasma enhanced chemical vapor deposition; Polycrystalline silicon thin films; Structure of seed layer; Two step growth method

Indexed keywords

CRYSTAL ORIENTATION; ELLIPSOMETRY; EPITAXIAL GROWTH; HYDROGEN; INTERFACES (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GLASS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS;

LAYER-BY-LAYER TECHNIQUES; MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEED CRYSTAL LAYERS; TWO-STEP-GROWTH (TSG) PROCESSES;

SEMICONDUCTING FILMS;

EID: 0033319012     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5762     Document Type: Article

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