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Volumn 266-269 A, Issue , 2000, Pages 38-42

Structural study of initial layer for μc-Si:H growth using real time in situ spectroscopic ellipsometry and infrared spectroscopy

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EID: 0002109343 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(99)00715-2 Document Type: Article

Times cited : (33)

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