Control of orientation from random to (220) or (400) in polycrystalline silicon films

Thin Solid Films

Volumn 337, Issue 1-2, 1999, Pages 18-22

  Kamiya, T ^a   Nakahata, K ^a   Miida, A ^a   Fortmann, C M ^a   Shimizu, I ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Chemical vapor deposition; Orientation control; Polycrystalline silicon thin film; Remote type microwave plasma; Tetra fluoro silane

Indexed keywords

EID: 0002086016     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01168-7     Document Type: Article

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