Ferroelectric films

Journal of Sol-Gel Science and Technology

Volumn 19, Issue 1-3, 2000, Pages 53-64

  Uhlmann, D R ^a   Dawley, J T ^a   Poisl, W H ^a   Zelinski, B J J ^a   Teowee, G ^b  

^a University of Arizona   (United States)

^b Sion Power Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CRYSTAL MICROSTRUCTURE; FERROELECTRICITY; PIEZOELECTRICITY; PYROELECTRICITY;

STRONTIUM BISMUTH TANTALATE; WET CHEMICAL METHODS;

FERROELECTRIC THIN FILMS;

EID: 0034478767     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008758020834     Document Type: Article

References (129)

1. J.J. Lee, C.L. Thio, and S.B. Desu, J. Appl. Phys. 78, 5073 (1995).
2. R.E. Newnham, R.W. Wolfe, and J.F. Dorrian, Mat. Res. Bull. 6, 1029 (1971).
3. D.J. Taylor, R.E. Jones, P. Zurcher, P. Chu, Y.T. Lii, B. Jiang, and S.J. Gillespie, Appl. Phys. Lett. 68, 2300 (1996).
4. R. Dat, J.K. Lee, O. Auciello, and A.I. Kingon, Appl. Phys. Lett. 67, 572 (1995).
5. M. Nagata, D.J. Vijay, X. Zhang, and S.B. Desu, Phys. Stat. Sol. 157, 75 (1996).
6. T. Li, Y. Zhu, S.B. Desu, and M. Nagata, in Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II, edited by S.B. Desu, D.B. Beach, and P.C. Van Buskirk (MRS, Boston, MA, 1996), p. 189.
7. T. Li, Y. Zhu, S.B. Desu, C.-H. Peng, and M. Nagata, Appl. Phys. Lett. 68, 616 (1996).
8. C.D. Gutleben, Y. Ikeda, C. Isobe, A. Machida, T. Ami, K. Hironaka, and E. Morita, in Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II, edited by S.B. Desu, D.B. Beach, and P.C.V. Buskirk (MRS, Boston, MA, 1996), p. 201.
9. Y. Ikeda, K. Hironaka, and C. Isobe, in Ferroelectric Thin Films VI, edited by R.E. Treece, R.E. Jones, C.M. Foster, S.B. Desu, and I.K. Yoo (MRS, Boston, MA, 1998), p. 209.
10. J.-K. Lee, T.K. Song, and H.-J. Jung, Surf. Coat. Tech. 98, 908 (1998).
11. C.H. Yang, S.S. Park, and S.G. Yoon, Integr. Ferro. 18, 377 (1997).
12. B.A. Tuttle and R.W. Schwartz, MRS Bulletin. 21, 49 (1996).
13. R.W. Vest, Ferroelectrics 102, 53 (1990).
14. K.D. Budd, S.K. Dey, and D.A. Payne, Brit. Ceram. Proc. 36, 107 (1985).
15. T. Hayashi, T. Hara, and H. Takahashi, Jpn. J. Appl. Phys. 36, 5900 (1997).
16. T. Hayashi, H. Takahashi, and T. Hara, Jpn. J. Appl. Phys. 35, 4952 (1996).
17. I. Koiwa, T. Kanehara, J. Mita, T. Iwabuchi, T. Osaka, and S. Ono, Jpn. J. Appl. Phys. 36, 1597 (1997).
18. J.T. Dawley, R. Radspinner, B.J.J. Zelinski, D.B. Milliard, K.A. Jackson, G. Teowee, D.R. Uhlmann, P.Y. Chu, B.M. Melnick, and J.R.E. Jones, in Sol-Gel Synthesis and Processing (American Ceramic Society, Cincinnati, OH, 1998), p. 119.
19. T. Ito et al., US Patent 5508226, 1996.
20. Y. Ito, M. Ushikubo, S. Yokoyama, H. Matsunaga, T. Atsuki, T. Yonezawa, and K. Ogi, Jpn. J. Appl. Phys. 35, 4925 (1996).
21. N. Ogata, M. Nagata, K. Ishihara, H. Urashima, A. Okutoh, S. Yamazaki, S. Mitarai, and J. Kudo, Jpn. J. Appl. Phys. 37, 3481 (1998).
22. J.-P. Han and T.P. Ma, Appl. Phys. Lett. 71, 1267 (1997).
23. T. Kanehara, I. Koiwa, Y. Okada, K. Ashikaga, H. Hatoh, and K. Kaifu, in International Electron Devices Meeting (IEEE, Washington, D.C., 1997), p. 601.
24. K. Katori, N. Nagel, K. Watanabe, M. Tanaka, H. Yamoto, and H. Yagi, Integr. Ferro. 17, 443 (1997).
25. P.C. Joshi, S.O. Ryu, X. Zhang, and S.B. Desu, J. Korean Phys. Soc. 32, S1583 (1998).
26. T. Atsuki, N. Soyama, T. Yonezawa, and K. Ogi, Jpn. J. Appl. Phys. 34, 5096 (1995).
27. C.D. Gutleben, in Ferroelectric Thin Films V, edited by S.B. Desu, R.E. Jones, R. Ramesh, B.A. Tuttle, and I.K. Yoo (MRS, San Francisco, CA, 1996), p. 109.
28. T.-C. Chen, T. Li, X. Zhang, and S.B. Desu, J. Mater. Res. 12, 1569 (1997).
29. T. Noguchi, T. Hase, and Y. Miyasaka, Jpn. J. Appl. Phys. 35 (Part 1), 4900 (1996).
30. T. Hase, T. Noguchi, K. Amanuma, and Y. Miyasaka, Integr. Ferro. 15, 127 (1997).
31. S. Hayashi, K. Arita, Y. Shimada, E. Fujii, T. Otsuki, and C.A. Paz de Araujo, in ISIF '97, Santa Fe, NM, 1997.
32. B.M. Melnick, J. Abrokwah, J. Hallmark, and B. Ooms, Integr. Ferro. 15, 221 (1997).
33. RC. Joshi, S.O. Ryu, S. Tirumala, and S.B. Desu, in Ferroelectric Thin Films VI, edited by R.E. Treece, R.E. Jones, C.M. Foster, S.B. Desu, and I.K. Yoo (MRS, Boston, MA, 1998), p. 215.
34. H. Suzuki, M.B. Othman, K. Murakami, S. Kaneko, and T. Hayashi, Jpn. J. Appl. Phys. 35, 4896 (1996).
35. J.S. Lee, C.J. Kim, D.S. Yoon, G.G. Choi, J.M. Kim, and K. No, Jpn. J. Appl. Phys. 33, 260 (1994).
36. S.-Y. Chen, X.-F. Du, and I.-W. Chen, in Ferroelectric Thin Films IV, edited by B.A. Tuttle, S.B. Desu, R. Ramesh, and T. Shiosake (MRS, Boston, MA, 1995), p. 15.
37. G.D. Hu, J.B. Xu, I.H. Wilson, W.Y. Cheung, N. Ke, and S.P. Wong, Appl. Phys. Lett. 74, 3711 (1999).
38. T.J. Boyle, C.D. Buchheit, M.A. Rodriguez, H.N. Al-Shareef, and B.A. Hernandez, J. Mater. Res. 11, 2274 (1996).
39. K. Amanuma, T. Hase, and Y. Miyasaka, in Ferroelectric Thin Films IV, edited by B.A. Tuttle, S.B. Desu, R. Ramesh, and T. Shiosake (MRS, Boston, MA, 1995), p. 22.
40. M. Klee and U. Mackens, Microelect. Eng. 29, 185 (1995).
41. K. Amanuma, T. Hase, and Y. Miyasaka, Appl. Phys. Lett. 66, 221 (1995).
42. P.Y. Chu, R.E.J. Jr., P. Zurcher, D.J. Taylor, B. Jiang, and S.J. Gillespie, J. Mater. Res. 11, 1065 (1996).
43. K.B. Lee, H.S. Lee, and S.K. Cho, J. Korean Phys. Soc. 32, S1565 (1998).
44. I. Koiwa, T. Kanehara, J. Mita, T. Iwabuchi, T. Osaka, S. Ono, and M. Maeda, Jpn. J. Appl. Phys. 35, 4946 (1996).
45. T. Osaka, A. Sakakibara, T. Seki, S. Ono, I. Koiwa, and A. Hashimoto, Jpn. J. Appl. Phys. 37 (Part 1), 597 (1998).
46. G. Schindler, W. Hartner, V. Joshi, N. Solayappan, G. Derbenwick, and C. Mazure, Integr. Ferro. 17, 421 (1997).
47. C.-H. Lu and B.-K. Fang, J. Mater. Res. 12, 2104 (1997).
48. K. Watanabe, M. Tanaka, N. Nagel, K. Katori, M. Sugiyama, H. Yamoto, and H. Yagi, in ISIF '97, Santa Fe, NM, 1997.
49. E. Tokumitsu, G. Fujii, and H. Ishiwara, in Ferroelectric Thin Films VI, edited by R.E. Treece, R.E. Jones, C.M. Foster, S.B. Desu, and I.K. Yoo (Materials Research Society, Boston MA, 1998), p. 459.
50. K. Lefki and G.J.M. Dormans, J. Appl. Phys. 76, 1764 (1994).
51. D. Damjanovic, K.G. Brooks, A. Kholkin, M. Kohli, T. Maeder, P. Muralt, and N. Setter, in Materials for Smart Systems, edited by E.P. George, S. Takahashi, S. Troiler-McKinstry, K. Uchino, and M. Wun-Fogle (MRS, Boston, 1994), p. 429.
52. H.D. Chen, K.R. Udayakumar, C.J. Gaskey, L.E. Cross, J.J. Bernstein, and L.C. Niles, J. Amer. Ceram. Soc. 79, 2189 (1996).
53. A.L. Kholkin, A.K. Tagantsev, K.G. Brooks, D.V. Taylor, and N. Setter, in ISAF '96, edited by B.M. Kulwicki, A. Amin, and A. Safari (IEEE, East Brunswick, NJ, 1996), p. 351.
54. F. Chu, F. Xu, J. Shepard, and S. Trolier-McKinstry, in Ferroelectric Thin Films VI, edited by R.E. Treece, R.E. Jones, C.M. Foster, S.B. Desu, and I.K. Yoo (MRS, Boston MA, 1998), p. 409.
55. M. Sayer, D.A. Barrow, R. Noteboom, E.M. Griswold, and Z. Wu, NATO ASI Ser., Ser. E 284 399 (1995).
56. M. Sayer, D.A. Barrow, T.E. Petroff, and R. Pascual, Can. Ceram. Q. 65, 124 (1996).
57. D.A. Barrow, T.E. Petroff, and M. Sayer, US Patent 5585136, 1996.
58. D. Barrow, Key Eng. Mater. 122-124, 443 (1996).
59. G.H. Haertling, J. Amer. Ceram. Soc. 82, 797 (1999).
60. P. Muralt, in ISAF '96, edited by B.M. Kulwicki, A. Amin, and A. Safari (IEEE, Piscataway, 1996), p. 145.
61. T. Itoh, C. Lee, J. Chu, and T. Suga, in The Tenth Annual International Workshop on Micro Electro Mechanical Systems: An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots (IEEE, Nagoya, 1997), p. 78.
62. T. Itoh, C. Lee, and T. Suga, Appl. Phys. Lett. 69, 2036 (1996).
63. P. Gaucher, D. Eichner, J. Hector, and W.V. Munch, J. Phys. IV France 8, 235 (1998).
64. C. Lee, T. Itoh, and T. Suga, Thin Solid Films 299, 88 (1997).
65. A.L. Kholkin and M.L. Calzada, J. Phys. IV France 8, 195 (1998).
66. P. Gaucher, in Third International Conference on Intelligent Materials, edited by P.F. Gobin and J. Tatibouet (SPIE, Lyon, France, 1996), p. 610.
67. P. Luginbuhl, S.D. Collins, G.-A. Racine, M.-A. Gretillat, N.F. de Rooij, K.G. Brooks, and N. Setter, in The Tenth Annual International Workshop on Micro Electro Mechanical Systems (IEEE, Nagoya Japan, 1997), p. 327.
68. J.J. Bernstein, S.L. Finberg, K. Houston, L.C. Niles, H.D. Chen, L.E. Cross, K.K. Li, and K. Udayakumar, IEEE Trans. Ultra., Ferro. Freq. Cont. 44, 960 (1997).
69. F. Xu and S. Trolier-McKinstry, in ISAF '96, edited by B.M. Kulwicki, A. Amin, and A. Safari (IEEE, East Brunswick, NJ, 1996), p. 511.
70. A. Patel and J.S. Obhi, GEC J. Res. 12, 141 (1995).
71. J.F. Shepard, Jr., F. Chu, I. Kanno, and S. Trolier-McKinstry, J. Appl. Phys. 85, 6711 (1999).
72. J. Shepard, Jr., F. Chu, P.J. Moses, and S. Trolier-McKinstry, in Ferroelectric Thin Films VI, edited by R.E. Treece, R.E. Jones, C.M. Foster, S.B. Desu, and I.K. Yoo (MRS, Boston MA, 1998), p. 415.
73. F. Xu, F. Chu, and S. Trolier-McKinstry, J. Appl. Phys. 86, 588 (1999).
74. K. Sumi, H. Qiu, H. Kamei, S. Moriya, M. Murai, M. Shimada, T. Nishiwaki, K. Takei, S. Miyashita, and M. Hashimoto, Thin Solid Films 315, 77 (1998).
75. C.R. Cho, D.E. Drinkwater, L.F. Francis, and D.L. Polla, Mater. Lett. 38, 136 (1999).
76. A.L. Kholkin, K.G. Brooks, and N. Setter, Appl. Phys. Lett. 71, 2044 (1997).
77. D.R. Uhlmann and G. Teowee, in Sol-Gel Optics IV, edited by B.S. Dunn, J.D. Mackenzie, E.J.A. Pope, H.K. Schmidt, and M. Yamane (SPIE, San Diego, CA, 1997), p. 384.
78. S.-E. Park and T.R. Shrout, J. Appl. Phys. 82, 1804 (1997).
79. D.R. Uhlmann, J.T. Dawley, B.J.J. Zelinski, G. Teowee, and J.M. Boulton, in Sol-Gel Processing of Advanced Materials, edited by L.C. Klein, J.A. Pope, S. Sakka, J.L. Woolfrey (American Ceramic Society, 1998), p. 141.
80. J. Baborowski, S. Heidiger, P. Muralt, and C. Wuethrich, Ferroelectrics 224, 283 (1999).
81. P.W. Kruse, in ISAF '94, edited by R.K. Pandey, M. Liu, and A. Safari (IEEE, 1995), p. 643.
82. M. Okuyama and Y. Hamakawa, Ferroelectrics 118, 261 (1991).
83. D.L. Polla, T. Tamagawa, C. Ye, P. Schiller, L. Pham, and C.Y Tu, in Sensors and Sensor Systems for Guidance and Navigation II, edited by S.S. Welch (SPIE, 1992), p. 173.
84. B.M. Kulwicki, A. Amin, H.R. Beratan, and C.M. Hanson, in ISAF '92, edited by M. Liu, A. Safari, A. Kingon, and G. Haertling (IEEE, 1992), p. 1.
85. J.G. Ho, P.R. Nelson, F.H. Lin, D.T. Chang, W.J. Kaiser, and O.M. Stafsudd, in Photodetectors: Materials and Devices, edited by G.J. Brown and M. Razeghi (SPIE, 1996), p. 91.
86. W. Ren, Y. Liu, X. Wu, L. Zheng, and X. Yao, Integr. Ferro. 15, 271 (1997).
87. J.A. Ruffner et al., US Patent 5949071, 1999.
88. M. Jain, A.K. Tripathi, T.C. Goel, and RK. Pillai, J. Mat. Sci. Lett. 18, 479 (1999).
89. K.K. Deb, K.W. Bennett, and P.S. Brody, J. Vac. Sci. Technol. A 13, 1128 (1995).
90. M. Liu, E. He, P. Wang, Y. Rao, Y. Zeng, and C. Li, Mat. Sci. Eng. C 3, 241 (1995).
91. A. Bell, Y. Huang, M. Kohli, O. Paul, P. Ryser, and M. Forster, in ISAF '94, edited by R.K. Pandey, M. Liu, and A. Safari (IEEE, 1995), p. 691.
92. D.L. Polla, C.P. Ye, and T. Tamagawa, Appl. Phys. Lett. 59, 3539 (1991).
93. B.B. Cale, in Ferroelectric Thin Films II, edited by A.I. Kingon, E.R. Myers, and B. Tuttle (MRS, 1992).
94. K. No, C. Choi, D.S. Yoon, T. Sung, Y.C. Kim, I.S. Jeong, and W.J. Lee, Jpn. J. Appl. Phys. 35, 2731 (1996).
95. W. Wang, T. Karaki, and M. Adachi, Jpn. J. Appl. Phys. 37, 4910 (1998).
96. J. Huang, J. Lian, and R.C. Buchanan, in ISAF '96, edited by B.M. Kulwicki, A. Amin, and A. Safari (IEEE, 1996), p. 623.
97. H. Adachi, T. Matsuzaki, T. Yamada, T. Shiosaki, and A. Kawabata, Jpn. J. Appl. Phys. 26, 550 (1987).
98. J.A. Ruffner, P.G. Clem, B.A. Tuttle, C.J. Brinker, C.S. Sriram, and J.A. Bullington, Thin Solid Films 332, 356 (1998).
99. M. Schreiter, R. Bruchhaus, D. Pitzer, and W. Wersing, in ISAF '98, edited by E. Colla, D. Damjanovic, and N. Setter (IEEE, 1998), p. 181.
100. K.C. McCarthy, F.S. McCarthy, G. Teowee, T.J. Bukowski, T.P. Alexander, and D.R. Uhlmann, Integr. Ferro. 17, 377 (1997).
101. Y. Xu, C.H. Cheng, and J.D. Mackenzie, J. Non-Cryst. Solids 176, 1 (1994).
102. Z. Huang, Q. Huang, and R.W. Whatmore, J. Appl. Phys. 85, 7355 (1999).
103. J.F. Roeder, I.S. Chen, P.C. Va Buskirk, H.R. Beratan, and C.M. Hanson, in ISAF '98, edited by E. Colla, D. Damjanovic, and N. Setter (IEEE, 1998), p. 217.
104. R. Köhler, G. Suchaneck, P. Padmini, T. Sandner, G. Gerlach, and G. Hofmann, Ferroelectrics 225, 57 (1999).
105. K.G. Brooks, M. Kohli, D.V. Taylor, T. Maeder, I. Reaney, A. Kholkin, P. Muralt, and N. Setter, in ISAF '96, edited by B.M. Kulwicki, A. Amin, and A. Safari (IEEE, 1996), p. 611.
106. M. Kohli and P. Muralt, Ferroelectrics 225, 155 (1999).
107. A. Tripathi, A.K. Tripathi, T.C. Goel, and RK. Pillai, in ISE 9, edited by A. Zhongfu and Z. Hongyan (IEEE, 1996), p. 878.
108. A. Seifert, P. Muralt, and N. Setter, Ferroelectrics 225, 49 (1999).
109. J.F. Roeder, I.S. Chen, P.C. Van Buskirk, and H.R. Beratan, in ISAF '96, edited by B.M. Kulwicki, A. Amin, and A. Safari (IEEE, 1996), p. 227.
110. K. Iijima, R. Takayama, Y. Tomita, and I. Ueda, J. Appl. Phys. 60, 2914 (1986).
111. R. Takayama, T. Tomita, K. Iijima, and I. Ueda, Ferroelectrics 118, 325 (1991).
112. J.R. Giniewicz, Ferroelectrics 118, 157 (1991).
113. S.J. Kang, Y.S. Yoon, and D.I. Kim, in Ferroelectric Thin Films V, edited by S.B. Desu, R. Ramesh, B.A. Tuttle, R.E. Jones, and I.K. Yoo (MRS, Boston, 1996), p. 413.
114. S. Amirhaghi, V. Craciun, D. Craciun, J. Elders, and W. Boyd, Microelec. Eng. 25, 321 (1994).
115. W. Liu, L. Zhang, and X. Yao, Infrared Phys. Tech. 36, 857 (1995).
116. C.M. Wang, Y.C. Chen, M.S. Lee, J.W. Wu, and C.C. Chiou, Jpn. J. Appl. Phys. 37, 951 (1998).
117. D.A. Tossell, J.S. Obhi, N.M. Shorrocks, A. Patel, and R.W. Whatmore, in ISAF '92, edited by M. Lui, A. Safari, A. Kingon, and G. Haertling (IEEE, Piscataway, 1992), p. 11.
118. R. Jimenez, M.L. Calzada, and J. Mendiola, Thin Solid Films 348, 253 (1999).
119. R.W. Vest and J. Xu, Ferroelectrics 93, 21 (1984).
120. C. Bjornmander, Appl. Phys. Lett. 61, 58 (1995).
121. A. Patel, N. Shorrocks, and R. Whatmore, Ferroelectrics 134, 343 (1992).
122. C. Ye, P. Baude, and D.L. Polla, in Crystallization and Related Phenomena in Amorphous Materials, edited by M. Libera (MRS, 1994), p. 603.
123. I. Lubomirsky, D.T Chang, and O.M. Stafsudd, J. Appl. Phys. 85, 6690 (1999).
124. D.L. Polla, in Ferroelectric Thin Films II, edited by A.I. Kingon, E.R. Myers, and B. Tuttle (MRS, 1992), p. 55.
125. D. Yang, W. Bai, Z. Wu, Y. Jiang, S. Wang, X. Chen, and L. Wang, in ISE 9, edited by X. Zhongfu and Z. Hongyan (IEEE, 1996), p. 995.
126. Y. Chen, H.L. Chan, and C.L. Choy, Thin Solid Films 323, 270 (1998).
127. V. Chernokozhin, E. Pevtsov, M. Pospelova, and A. Sigov, Ferroelectrics 225, 67 (1999).
128. G. Teowee and D.R. Uhlmann, Integr. Ferro. 22, 411 (1998).
129. G. Teowee and D.R. Uhlmann, Integr. Ferro. 22, 421 (1998).