Fine-grained SrBi2Ta2O9 thin films by low temperature annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 6 A, 1998, Pages 3481-3485

  Ogata, Nobuhito ^a   Nagata, Masaya ^a   Ishihara, Kazuya ^a   Urashima, Hitoshi ^a   Okutoh, Akira ^a   Yamazaki, Shinobu ^a   Mitarai, Shun ^a   Kudo, Jun ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

Ferroelectric nonvolatile memory; Ferroelectric thin film; Low pressure annealing; Low temperature process; MOD; SrBi2Ta2O9

Indexed keywords

EID: 0000176648     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.3481     Document Type: Article

References (6)

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