Preparation of SrBi2Ta2O9 thin films with ultra-high resistance to annealing in hydrogen atmosphere for ferroelectric memories

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 601-604

  Kanehara, Takao ^a   Koiwa, Ichiro ^a   Okada, Yukihisa ^a   Ashikaga, Kinya ^a   Katoh, Hiroyo ^a   Kaifu, Katsuaki ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC MEMORY TECHNOLOGY;

ANNEALING; DEGRADATION; ELECTRIC PROPERTIES; FERROELECTRIC DEVICES; HEAT RESISTANCE; HYDROGEN; PASSIVATION; PROTECTIVE ATMOSPHERES; STRONTIUM COMPOUNDS; THIN FILMS;

DIELECTRIC FILMS;

EID: 84886448101     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)