New top and bottom electrodes for SrBi2Ta2O9 ferroelectric capacitors

Integrated Ferroelectrics

Volumn 17, Issue 1-4, 1997, Pages 443-450

  Katori, Kenji ^a   Nagel, Nicolas ^a   Watanabe, Koji ^a   Tanaka, Masahiro ^a   Yamoto, Hisayoshi ^a   Yagi, Hajime ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Diffusion barrier; Electrode; Forming gas annealing; SBT; Stacked structure

Indexed keywords

ANNEALING; CAPACITORS; DIFFUSION; ELECTRODES; MAGNETIC HYSTERESIS; PEELING; POLARIZATION; REMANENCE; SEMICONDUCTING SILICON; STRONTIUM COMPOUNDS;

STRONTIUM BISMUTH TANTALATE;

FERROELECTRIC DEVICES;

EID: 0031338438     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708013018     Document Type: Article

References (8)

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