Preparation and electrical properties of sol-gel derived Zr-rich Pb(Zr,Ti)O3 thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 9 A, 1998, Pages 4910-4913

  Wang, Wensheng ^a   Karaki, Tomoaki ^a   Adachi, Masatoshi ^a  

^a TOYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

Perovskite; Pyroelectric; Rapid thermal annealing; Sol gel; Thin film; Zr rich PZT

Indexed keywords

CHEMICAL OPERATIONS; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; FILM PREPARATION; PHASE TRANSITIONS; PYROELECTRICITY; RAPID THERMAL ANNEALING; SEMICONDUCTING LEAD COMPOUNDS; THICKNESS MEASUREMENT;

METAL ALKOXIDES; REMANENT POLARIZATION; SOL GEL PROCESSING; ZIRCONIUM RICH LEAD ZIRCONATE TITANATE;

SEMICONDUCTING FILMS;

EID: 0032154667     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4910     Document Type: Article

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