Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metalorganic decomposition

Applied Physics Letters

Volumn 74, Issue 24, 1999, Pages 3711-3713

  Hu, G D ^a   Xu, J B ^a   Wilson, I H ^a   Cheung, W Y ^a   Ke, N ^a   Wong, S P ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; DECOMPOSITION; DEPOSITION; ELECTRIC FIELDS; FERROELECTRIC MATERIALS; MORPHOLOGY; POLARIZATION; STRONTIUM COMPOUNDS; THIN FILMS;

METALORGANIC DECOMPOSITION (MOD) TECHNIQUES; REMANENT POLARIZATION;

DIELECTRIC FILMS;

EID: 0032620498     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123229     Document Type: Article

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