New low temperature processing of sol-gel SrBi2Ta2O9 thin Films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 9 SUPPL. B, 1996, Pages 4925-4929

  Ito, Yasuyuki ^a   Ushikubo, Maho ^a   Yokoyama, Seiichi ^a   Matsunaga, Hironori ^a   Atsuki, Tsutomu ^b   Yonezawa, Tadashi ^b   Ogi, Katsumi ^b  

^a SHARP CORPORATION   (Japan)

^b MITSUBISHI MATERIALS CORPORATION   (Japan)

Author keywords

Ferroelectric nonvolatile memory; Ferroelectric thin film; Low temperature process; Sol gel; SrBi2Ta2O9

Indexed keywords

FERROELECTRIC THIN FILM; LOW TEMPERATURE PROCESS;

ANNEALING; EXPERIMENTS; FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; SOL-GELS;

THIN FILMS;

EID: 0030232786     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4925     Document Type: Article

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