IsotHermal and Isochronal Annealing Experiments on Irradiated Commercial Power VDMOSFETs

IEEE Transactions on Nuclear Science

Volumn 47, Issue 3 PART 1, 2000, Pages 659-666

  Jaksic, A B ^a  

^a FACULTY OF ELECTRONIC ENGINEERING   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT GATE BIAS; ISOCHRONAL ANNEALING; ISOTHERMAL ANNEALING; POST IRRADIATION EFFECT; SWITCHING GATE BIAS; VDMOSFET;

ANNEALING; DOSIMETRY; GAMMA RAYS; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS;

RADIATION EFFECTS;

EID: 0034206583     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.856495     Document Type: Article

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