Creation and passivation of interface traps in irradiated MOS transistors during annealing at different temperatures

Solid-State Electronics

Volumn 41, Issue 5, 1997, Pages 715-720

  Pejović, Momčilo ^a   Ristić, Goran ^a  

^a UNIVERSITY OF NI   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); PASSIVATION;

HYDROGEN WATER MODEL; NEUTRALIZATION;

MOSFET DEVICES;

EID: 0031140974     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00252-3     Document Type: Article

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