Latent Thermally Activated Interface-Trap Generation in MOS Devices

IEEE Electron Device Letters

Volumn 13, Issue 4, 1992, Pages 203-205

  Schwank, James R ^a   Fleetwood, Daniel M ^a   Shaneyfelt, Marty R ^a   Winokur, Peter S ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS--RADIATION EFFECTS;

INTERFACE-TRAP DENSITY; LATENT BUILDUP; LOW-DOSE-RATE RADIATION ENVIRONMENTS; THERMAL ACTIVATION;

SEMICONDUCTOR DEVICES, MOS;

EID: 0026851527     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.145021     Document Type: Article

References (2)

1. S. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
2. G. Groeseneken, H. E. Maes, B. Bertran, and R. F. de Keersmaecker, ,A reliable approach to charge pumping measurements in MOS transistors,- IEEE Trans. Electron Devices, vol. ED-31, p. 42, 1984.