Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1307-1315

  Zupac, D ^a   Galloway, K F ^a   Khosropour, P ^a   Anderson, S R ^a   Schrimpf, R D ^a   Calvel, P ^b  

^a UNIVERSITY OF ARIZONA   (United States)

^b THALES ALENIA SPACE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DEGRADATION; ELECTRON TRANSPORT PROPERTIES; INTERFACES (MATERIALS); OXIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICE MODELS;

INTERFACE TRAPPED CHARGE; MOBILITY BEHAVIOR; MOBILITY DATA SET; OXIDE TRAPPED CHARGE;

MOSFET DEVICES;

EID: 0027886813     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273537     Document Type: Article

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