Time Dependence of Switching Oxide Traps

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 1835-1843

  Lelis, Aivars J ^a   Oldham, Timothy R ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE CARRIERS; CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; RADIATION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

CHARGE SWITCHING; HOLE TRAP; TRAPPED OXIDE CHARGE;

MOSFET DEVICES;

EID: 0028726796     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340515     Document Type: Article

References (30)

1. A. J. Lelis, H. E. Boesch, J r., T. R. Oldham, and F. B. McLean, Reversibility of Trapped Hole Annealing, IEEE Trans. Nucl. Sci., NS35, 1186–1191 (1988).
2. A. J. Lelis, T. R. Oldham, H. E. Boesch, Jr., and F. B. McLean, The Nature of the Trapped Hole Annealing Process, IEEE Trans. Nucl. Sci., NS36, 1808–1815 (1989).
3. F. B. McLean, H. E. Boesch, Jr., and T. R. Oldham, “Electron-Hole Generation, Transport, and Trapping in SiO2,” Chapter 3 of Ionizing Radiation Effects in MOS Devices and Circuits, T. P. Ma and P. V. Dressendorfer, eds, Wiley Interscience, New York (1989).
4. R. K. Freitag, D. B. Brown, and C. M. Dozier, Experimental Evidence of Two Species of Radiation Induced Trapped Positive Charge, IEEE Trans. Nucl. Sci., NS40, 1316–1322 (1993),
5. J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin, “Physical Mechanisms Contributing to Device Rebound,” IEEE Trans. Nucl. Sci., NS31, 1434–1438 (1984).
6. C. M. Dozier, D. B. Brown, J. L. Throckrnorton, and D. I. Ma, Defect Production in SiO2 by X-Ray and Co-60 Radiations, IEEE Trans. Nucl. Sci., NS32, 4363–4368 (1985).
7. T. R. Oldham, A. J. Leis, and F. B. McLean, Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing, IEEE Trans. Nucl. Sci., NS33, 1203–1209 (1986).
8. F. J. Feigl, W. B. Fowler, and K. L. Yip, Oxygen Vacancy Model for the E1 Center in SiO2, Solid State Commun., 14, 225–229 (1974).
9. P. M. Lenahan and P. V. Dressendorfer, Hole Traps and Trivalent Silicon Centers in Metal/Oxide/Silicon Devices, J. Appl. Phys., 55, 3495–3499 (1984).
10. B. E. Deal, M. Sklar, A. S. Grove, and E. H. Snow, Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon, J. Electrochem. Soc., 114, 266–274 (1967).
11. F. J. Grunthaner, P. J. Grunthaner, and J. Maserjian, Radiation-Induced Defects in SiO2 as Determined with XPS, IEEE Trans. Nucl. Sci., NS29, 1462–1466 (1982).
12. P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, Correlating the Radiation Response of MOS Capacitors and Transistors, IEEE Trans. Nucl. Sci., NS31, 1453–1460 (1984).
13. Z. Shanfield, G. A. Brown, A. G. Revesz, and H. L. Hughes, A New MOS Radiation-Induced Charge: Negative Fixed Interface Charge, J. Radiat. Eff. Res. Eng., 8 (No. 2), 1–5 (1990) and IEEE Trans. Nucl. Sci., NS39, 303–307 (1992).
14. D. M. Fleetwood, R. A. Reber, J r., and P. S. Winokur, Effect of Bias on Thermally Stimulated Current (TSC) in Irradiated MOS Devices, IEEE Trans. Nucl. Sci., NS38, 1066–1077 (1991).
15. D. M. Fleetwood, S. L. Miller, R. A. Reber, Jr., P. J. McWhorter, P. S. Winokur, M. R. Shaneyfelt, and J. R. Schwank, New Insights into Radiation-induced Oxide-Trap Trap Charge Through TSC Measurement and Analysis, IEEE Trans. Nucl. Sci., NS39, 2192–2203 (1992).
16. D. M. Fleetwood, P. S. Winokur, R. A. Reber, Jr., T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfelt, and L. C. Riewe, “Effects of oxide traps, interface traps, and border traps” on metal-oxide-semiconductor devices”, J. Appl. Phys., 73, 5058–5074 (1993).
17. M. Walters and A. Reisman, Radiation-Induced Neutral Electron Trap Generation in Electrically Biased Insulated Gate Field Effect Transistor Gate Insulators, J. Electrochem. Soc., 138, 2756–2762 (1991).
18. J. M. Aitken, D. R. Young, and K. Pan, Electron Trapping in Electron Beam Irradiated SiO2, J. Appl. Phys., 49, 3386–3391 (1978), and J. M. Aitken and D. R. Young, Electron Trapping by Radiation-Induced Charge in MOS Devices, J. Appl. Phys., 47, 1196–1198 (1976).
19. J. M. Aitken, Radiation-induced Trapping Centers in Thin Silicon Dioxide Films, J. Non-Crystalline Solids, 40, 31–47 (1980).
20. S. E. Thompson and T. Nishida, Tunneling and Thermal Emission of Electrons from a Distribution of Shallow Traps in SiO2, Appl. Phys. Lett., 58, 1262–1264 (1991).
21. S. J. Wang, J. M. Sung, and S. A. Lyon, Relationship between hole trapping and interface state generation in metal-oxide-silicon structures, Appl. Phys. Lett., 52, 1431–1433 (1988).
22. T. R. Oldham, F. B. McLean, H. E. Boesch, Jr., and J. M. McGarrity, An Overview of Radiation-Induced Interface Traps in MOS Structures, Semiconductor Science and Technology, 4, 986 (1989).
23. L. P. Trombetta, F. J. Feigl, and R. J. Zeto, Positive Charge Generation in Metal-Oxide-Semiconductor Capacitors, J. Appl. Phys., 69, 2512–2521 (Feb. 1991).
24. L. P. Trombetta, G. J. Gerardi, D. J. DiMaria, and E. Tierney, An electron paramagnetic resonance study of electron injected oxides in metal-oxide-semiconductor capacitors, J. Appl. Phys., 64, 2434–2438 (1988).
25. D. J. DiMaria, E. Cartier, and D. Arnold, Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon, J. Appl. Phys., 73, 3367–3384 3384 (1993).
26. F. J. Feigl, D. R. Young, D. J. DiMaria, S. Lai, and J. Calise, The effects of water on oxide and interface trapped charge generation in thermal SiO2 films, J. Appl. Phys., 52, 5665–5682 (1981).
27. W. L. Warren and P. M. Lenahan, 29 Si hyperfine spectra and structure of E*dangling-bond defects in plasma-enhanced enhanced chemical-vapor deposited silicon dioxide films on silicon, J. Appl. Phys., 66, 5488–5491 (1989).
28. D. A. Buchanan, J. H. Stathis, and P. R. Wagner, Trapped positive charge in plasma-enhanced chemical vapor deposited silicon dioxide films, Appl. Phys. Lett., 56, 1037–1039 (1990).
29. S. E. Curry, P. M. Lenahan, D. T. Krick, J. Kanicki, and C. T. Kirk, Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films, Appl. Phys. Lett, 56, 1359–1361 (1990).
30. D. M. Fleetwood, “Border Traps” in MOS Devices, IEEE Trans. Nucl. Sci., NS39, 269–271 (1992).